PART |
Description |
Maker |
APT11GF120BRDQ1 APT11GF120BRDQ1G |
FAST IGBT & FRED Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 11; 25 A, 1200 V, N-CHANNEL IGBT, TO-247AC
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Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
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APT20GF120SRDQ1G APT20GF120BRDQ1 APT20GF120BRDQ1G |
FAST IGBT & FRED
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Advanced Power Technology
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IRG4BC40FPBF |
Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
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International Rectifier
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BYP102 C67047-A2071-A2 |
FRED Diode(FRED 二极 李华明二极管(弗雷德二极管) FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics) From old datasheet system FRED-FET Diode
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Siemens Semiconductor G... SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
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APT60GF120JRD |
Fast IGBT & FRED 1200V 100A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
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BSM100GT120DN2 100T12N2 |
IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) 150 A, 1200 V, N-CHANNEL IGBT From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC 70 A, 600 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
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IRF[International Rectifier]
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IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
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IRF[International Rectifier]
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BYP101 C67047-A2072-A2 |
FRED-FET Diode From old datasheet system FRED DIODE (FAST RECOVERY EPITAXIAL DIODE SOFT RECOVERY CHARACTERISTICS) PLENUM VGA VIDEO CABLE 10FT - FF
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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IRG4BC29F IRG4BC30F IRG4BC30 |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17A条)
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IRF[International Rectifier] International Rectifier, Corp.
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V23990-P633-A-P1-19 |
IGBT FRED
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Vincotech
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